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参数资料
| 型号： | 2SK3842 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 222K |
| 代理商： | 2SK3842 |
2SK3842
2009-09-29
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature
Tc (°C)
RDS (ON) Tc
Drain-
sou
rce
O
N
re
sis
tan
ce
R
DS
(ON)
(
m
Ω
)
Drain-source voltage VDS (V)
IDR VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc (°C)
Vth Tc
Case temperature
Tc (°C)
PD Tc
Drain-
sou
rce
volt
ag
e
V
DS
(V)
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
5
1
3
2
4
0
80
0
40
80
120
160
40
Common source
VDS = 10 V
ID = 1 mA
Pulse test
1
1000
0.4
0
2.0
0.8
1.2
1.6
10
5
1
VGS = 0 V
100
10
Common source
Tc
= 25°C
Pulse test
3
0
10
2
6
4
8
80
160
80
0
40
80
160
0
40
120
19
ID = 75 A
38
Common source
VGS = 10 V
Pulse test
150
30
90
60
120
0
80
120
160
40
20
0
240
320
160
80
10
5
20
25
0
15
VGS
VDS
VDD = 12 V
48V
24V
Common source
ID = 75 A
Tc
= 25°C
Pulse test
50
40
30
100
1000
10000
0.1
1
100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
100000
10
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3843 | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3844 | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3844 | 45 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3856 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3856-6 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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