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参数资料
| 型号： | 2SK3842 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 222K |
| 代理商： | 2SK3842 |
2SK3842
2009-09-29
5
rth tw
Safe operating area
EAS – Tch
Drain-source voltage VDS (V)
Pulse width tw (S)
Channel temperature (initial) Tch (°C)
Normali
zed
tr
ansie
nt
thermal
impeda
nc
e
r th
(
t)
/R
th
(
ch-
c)
A
valan
che
ene
rgy
E
AS
(mJ)
Drain
curren
t
I D
(A)
0.3
0.1
3
30
300
1000
1
10
100
ID max (continuous)
ID max (pulsed) *
DC operation
Tc
= 25°C
1 ms *
VDSS max
100
0.5
10
100
μs *
*: Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
5
500
0
25
100
200
300
500
400
50
75
100
125
150
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
0.1
1
10
0.01
0.02
0.05
0.1
0.2
Duty
= 0.5
Single Pulse
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0°C/W
RG = 25 Ω
VDD = 25 V, L = 78 μH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
0 V
15 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3842(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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