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参数资料
| 型号： | 2SK3843 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1C, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 180K |
| 代理商： | 2SK3843 |
2SK3843
2007-11-14
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 40 V, VGS = 0 V
—
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
40
—
Drain–source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
15
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.0
V
VGS = 4.5 V, ID = 38 A
—
4.3
8.0
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 38 A
—
2.7
3.5
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 38 A
60
120
—
S
Input capacitance
Ciss
—
11200
—
Reverse transfer capacitance
Crss
—
800
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1350
—
pF
Rise time
tr
—
12
—
Turn–on time
ton
—
40
—
Fall time
tf
—
65
—
Switching time
Turn–off time
toff
Duty <= 1%, tw = 10 μs
—
260
—
ns
Total gate charge
(gate–source plus gate–drain)
Qg
—
210
—
Gate–source charge
Qgs
—
150
—
Gate–drain (“Miller”) Charge
Qgd
VDD ≈ 32 V, VGS = 10 V, ID = 75 A
—
60
—
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
75
A
Pulse drain reverse current
(Note 1)
IDRP
—
300
A
Forward voltage (diode)
VDSF
IDR1 = 75 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
100
—
ns
Reverse recovery charge
Qrr
IDR = 75 A, VGS = 0 V
dIDR/dt = 30 A/μs
—
120
—
nC
Marking
K3843
Lot No.
A line indicates
Lead (Pb)-Free Finish.
Part No. (or abbreviation code)
R
L
=0.53
Ω
VDD 20 V
0 V
VGS
10 V
4.7
Ω
ID = 38 A
VOUT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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