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参数资料
| 型号： | 2SK3843 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1C, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 180K |
| 代理商： | 2SK3843 |
2SK3843
2007-11-14
4
PD Tc
Gate
sou
rce
volt
age
V
GS
(
V
)
Case temperature Tc (°C)
Dynamic input/output
characteristics
Total gate charge Qg (nC)
Drain
source
volt
age
V
DS
(V)
Drain
powe
rdissip
ation
P
D
(W
)
Gate
th
reshold
volt
age
V
th
(V)
Case temperature Tc (°C)
RDS (ON) Tc
Drain
source
ON
resist
ance
R
DS
(
O
N
)
(
m
Ω
)
Drain
source voltage VDS (V)
IDR VDS
Drain
reverse
cur
rent
I DR
(A)
Drain
source voltage VDS (V)
C
VDS
Cap
acit
ance
C
(pF)
Vth Tc
Case temperature Tc (°C)
1
1000
0.4
0
2.0
1.2
0.8
1.6
100
10
3
1
VGS = 0, 1 V
Common source
Tc
= 25°C
Pulse test
0
10
2
6
4
8
40
80
160
0
40
80
Common source
Pulse test
ID = 75, 38, 19 A
38
19
40
10
20
30
0
16
4
8
12
0
VDD = 32 V
16
VGS
VDS
Common source
ID = 75 A
Tc
= 25°C
Pulse test
200
300
400
500
100
8
5
1
3
2
4
0
80
0
40
80
120
160
40
Common source
VDS = 10 V
ID = 1 mA
Pulse test
1000
100000
10000
1
0.1
100
10
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
100
120
VGS = 4.5 V
VGS = 10 V
5
150
30
90
60
120
0
80
120
160
40
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PDF描述 |
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| 2SK3856 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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