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参数资料
| 型号： | 2SK3843 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1C, 4 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 180K |
| 代理商： | 2SK3843 |
2SK3843
2007-11-14
3
Forwa
rd
tr
ansfer
admitt
ance
Y
fs
(S)
Drain
source
volt
age
V
DS
(V)
Drain
source voltage VDS (V)
ID – VDS
Drain
current
I
D
(A)
Drain
source voltage VDS (V)
ID – VDS
Drain
current
I
D
(A)
Gate
source voltage VGS (V)
ID – VGS
Drain
current
I
D
(A)
Gate
source voltage VGS (V)
VDS – VGS
Drain current ID (A)
Yfs ID
Drain current ID (A)
RDS (ON) ID
Drain
source
ON
resist
ance
R
DS
(
O
N
)
(
m
Ω
)
0
100
20
60
40
80
0.1
0
0.5
0.2
0.3
0.4
Common source
Tc
= 25°C
Pulse test
VGS = 3.25 V
4.5
5
10
8
4.25
6
4.75
3.75
1
10
100
10
100
1
Common source
Tc
= 25°C
Pulse test
VGS = 4.5 V
1000
Common source
Tc
= 25°C
Pulse test
0
200
40
120
80
160
1
0
5
23
4
Common source
VDS = 10 V
Pulse test
0
200
40
120
80
160
2
0
10
4
6
8
Tc
= 55°C
25
100
0
1.0
0.2
0.6
0.4
0.8
04
20
8
12
16
19
Common source
Tc
= 25°C
Pulse test
38
ID = 75 A
25
1
1000
10
100
Common source
VDS = 10 V
Pulse test
Tc
= 55°C
100
1
1000
100
10
3.5
4
8
10
6
5 4.75
4.5
4.25
4
3.75
3.5
VGS = 3.25 V
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3844(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 45A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3845(Q) | 功能描述:MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3846(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 40V 26A TO220NIS |
| 2SK3847(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3847-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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