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参数资料
| 型号： | 2SK3907 |
| 元件分类： | JFETs |
| 英文描述： | 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 192K |
| 代理商： | 2SK3907 |
2SK3907
2008-12-27
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH
II π-MOSVI)
2SK3907
Switching Regulator Applications
Small gate charge: Qg = 60 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 0.18 Ω (typ.)
High forward transfer admittance: |Yfs| = 12 S (typ.)
Low leakage current: IDSS = 500 μA (VDS = 500 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
23
Drain current
Pulse (Note 1)
IDP
92
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
552
mJ
Avalanche current
IAR
23
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.77 mH, IAR = 23 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
3
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3907(Q) | 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3911(Q) | 制造商:Toshiba 功能描述:Nch 600V 20A 0.32@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 20A TO-3PN |
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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