参数资料
型号: 2SK3907
元件分类: JFETs
英文描述: 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-16C1B, SC-65, 3 PIN
文件页数: 2/6页
文件大小: 192K
代理商: 2SK3907
2SK3907
2008-12-27
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
500
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 11.5 A
0.18
0.23
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 11.5 A
3.4
12
S
Input capacitance
Ciss
4250
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
420
pF
Rise time
tr
12
Turn-on time
ton
45
Fall time
tf
10
Switching time
Turn-off time
toff
80
ns
Total gate charge
Qg
60
Gate-source charge
Qgs
50
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 23 A
10
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
23
A
Pulse drain reverse current
(Note 1)
IDRP
92
A
Forward voltage (diode)
VDSF
IDR = 23 A, VGS = 0 V
-1.7
V
Reverse recovery time
trr
1350
ns
Reverse recovery charge
Qrr
IDR = 23 A, VGS = 0 V,
dIDR/dt = 100 A/μs
24
μC
Marking
RL =
17.4
Ω
0 V
10 V
VGS
VDD ≈ 200 V
ID = 11.5 A VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
K3907
TOSHIBA
Lot No.
A line indicates
Lead(Pb)-Free Finish
Part No. (or abbreviation code)
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