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参数资料
| 型号： | 2SK3919-ZK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 167K |
| 代理商： | 2SK3919-ZK |
Data Sheet D14004EJ2V0DS00
7
2SK3306
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.2
0.7±0.1
2.54
1.5±0.2
12 3
4±0.2
13.5
MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
5
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PDF描述 |
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| 2SK3921-01S | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3934(STA4,X,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK3935 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 450V TO-220SIS 制造商:Distributed By MCM 功能描述:450V 17A 50W Gds Toshiba Fet Sc-67 N-Ch |
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