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参数资料
| 型号： | 2SK3943-ZP |
| 元件分类： | JFETs |
| 英文描述： | 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, MP-25ZP, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 258K |
| 代理商： | 2SK3943-ZP |
Data Sheet D17188EJ2V0DS
2
2SK3943
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1.0
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
2.5
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 41 A
21
43
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 41 A
2.9
3.5
m
Ω
RDS(on)2
VGS = 5.5 V, ID = 41 A
3.8
5.6
m
Ω
Input Capacitance
Ciss
VDS = 10 V
5800
pF
Output Capacitance
Coss
VGS = 0 V
860
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
510
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A
29
ns
Rise Time
tr
VGS = 10 V
10
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
69
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 32 V
93
nC
Gate to Source Charge
QGS
VGS = 10 V
28
nC
Gate to Drain Charge
QGD
ID = 82 A
28
nC
Body Diode Forward Voltage
Note
VF(S-D)1
IF = 60 A, VGS = 0 V
0.88
1.2
V
VF(S-D)2
IF = 82 A, VGS = 0 V
0.92
1.5
V
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
49
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3943-ZP-E1-AY | 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3944-TD-E | 制造商:SANYO 功能描述:Nch 60V 2A 340m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 2A SOT89 |
| 2SK3947(Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS |
| 2SK3977-TL-E | 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0 |
| 2SK3979-TL-E | 制造商:SANYO 功能描述:Nch 200V 6A 450m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 6A TP-FA 制造商:Sanyo 功能描述:0 |
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