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参数资料
| 型号： | 2SK4069-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 294K |
| 代理商： | 2SK4069-ZK-E2-AY |
Data Sheet D18032EJ3V0DS
7
2SK4069
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-b)
2) TO-252 (MP-3ZK)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.6±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0.5±0.1
5.3 TYP.
2.3 TYP.
1.14 MAX.
1.06
TYP.
11.25
TYP.
4.13
TYP.
1.04
TYP.
6.1±0.2
1.1±0.13
2
13
4
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
5.1 TYP.
1.0
TYP.
6.1
±
0.2
0.51
MIN.
4.0
MIN
.
0.8
10.4
MAX.
(9.8
TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation.
Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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相关PDF资料 |
PDF描述 |
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| 2SK4070(1)-S27-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
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| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-ZK-E1-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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