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参数资料
| 型号： | 2SK4069-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 294K |
| 代理商： | 2SK4069-ZK-E2-AY |
Data Sheet D18032EJ3V0DS
3
2SK4069
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
Pe
rcentage
of
Rated
P
o
we
r-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
P
T
-Total
Powe
rDiss
ipation
-
W
0
5
10
15
20
25
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs CASE TEMPERATURE
I
D
-Drain
Cur
ren
t
-A
0.1
1
10
100
1000
0.1
1
10
100
P/W = 100
μs
ID(pul se)
1 ms
10 ms
ID(DC)
RDS(on) Limit ed
(VGS = 10 V)
TC = 25°C
Single pulse
Power Dissipat ion Limited
VDS - Drain to Source Voltage – V
I
D
–
Drain
C
u
rr
ent
-
A
0
10
20
30
40
0
50
100
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t
)-
Transient
T
herm
a
lResistanc
e
-
°C/
W
0.1
1
10
100
1000
Rth(ch-C) = 5.95°C/W
Single pulse
Rth(ch-A) = 125°C/W
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4070(1)-S27-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-S15-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK4070-ZK-E1-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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