参数资料
型号: 2SK4069-ZK-E2-AY
元件分类: 小信号晶体管
英文描述: 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
封装: LEAD FREE, MP-3ZK, 3 PIN
文件页数: 4/10页
文件大小: 294K
代理商: 2SK4069-ZK-E2-AY
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MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D18032EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 12 m
Ω MAX. (VGS = 10 V, ID = 15 A)
Low QGD: QGD = 3.2 nC TYP.
4.5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±30
A
Drain Current (pulse)
Note1
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT1
21
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
18
A
Single Avalanche Energy
Note2
EAS
32.4
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25
Ω, VGS = 20 → 0 V, L = 100
μH
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4069(1)-S27-AY
Note
TO-251 (MP-3-b)
2SK4069-ZK-E1-AY
Note
TO-252 (MP-3ZK)
2SK4069-ZK-E2-AY
Note
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
<R>
相关PDF资料
PDF描述
2SK4070(1)-S27-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4070-S15-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4070-S15-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
2SK4070-ZK-E1-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4070-ZK-E2-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
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