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参数资料
| 型号： | 2SK4070-ZK-E1-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 213K |
| 代理商： | 2SK4070-ZK-E1-AY |
Data Sheet D18785EJ2V0DS
4
2SK4070
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Current
-
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
VGS = 20 V
Pulsed
10 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cur
rent
-
A
0.01
0.1
1
10
02
46
8
10
12
14
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(o
ff)
-
Gate
Cut-
off
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Forward
Tran
sfer
Admittance
-
S
0.01
0.1
1
10
0.01
0.1
1
10
VDS = 10 V
Pulsed
Tch =
55°C
25
°C
75
°C
125
°C
150
°C
25°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS
(on)
-Drain
to
Source
On
-s
tate
Resi
stance
-
Ω
6
8
10
12
14
16
18
20
0
5
10
15
20
ID = 1.0 A
0.5 A
Pulsed
VGS – Gate to Source Voltage - V
R
DS
(o
n)
-Drai
nto
Sourc
eOn-sta
te
Re
sist
ance
-
Ω
6
8
10
12
14
0.01
0.1
1
10
VGS = 10 V
20 V
Pulsed
ID - Drain Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4076-ZK-E1-AY | 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078-ZK-E1-AY | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078 | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4080-ZK-E1-AY | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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