- 您现在的位置：买卖IC网 > PDF目录33505 > 2SK4070-ZK-E1-AY 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF资料下载
参数资料
| 型号： | 2SK4070-ZK-E1-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 213K |
| 代理商： | 2SK4070-ZK-E1-AY |
Data Sheet D18785EJ2V0DS
7
2SK4070
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
6.6
±0.2
Mold Area
2.3
±0.1
0.5
±0.1
0.76
±0.1
0.5
±0.1
No Plating
5.3 TYP.
0.7
TYP.
6.1
±
0.2
1.8
±
0.2
9.3
TYP.
4.0
MIN
.
1.02
TYP.
16.1
TYP.
4.3 MIN.
1
4
23
1.14 MAX.
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.6±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0.5±0.1
5.3 TYP.
2.3 TYP.
1.14 MAX.
1.06
TYP.
11.25
TYP.
4.13
TYP.
1.04
TYP.
6.1±0.2
1.1±0.13
2
13
4
3) TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
5.1 TYP.
1.0
TYP.
6.1
±
0.2
0.51
MIN.
4.0
MIN
.
0.8
10.4
MAX.
(9.8
TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
Source
Drain
Gate
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4076-ZK-E1-AY | 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078-ZK-E1-AY | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078 | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4080-ZK-E1-AY | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
发布紧急采购，3分钟左右您将得到回复。