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参数资料
| 型号： | 2SK4070-ZK-E1-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 213K |
| 代理商： | 2SK4070-ZK-E1-AY |
Data Sheet D18785EJ2V0DS
5
2SK4070
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
R
D
S
(on)
-Drain
to
Sou
rce
O
n-s
tate
Resis
tance
-Ω
0
5
10
15
20
25
-50
0
50
100
150
ID = 1.0 A
0.5 A
VGS = 10 V
Pulsed
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
1
10
100
1000
0.1
1
10
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,
t
d(of
f),
t
f-
S
w
itching
Time
-
ns
1
10
100
1000
0.1
1
10
tr
td(off)
td(on)
tf
VDD = 150 V
VGS= 10 V
RG = 10
Ω
ID - Drain Current - A
V
DS
–
Dr
ai
nto
S
ource
Voltage
-
V
0
100
200
300
400
500
600
0123
456
0
1
2
3
4
5
6
7
8
9
10
VDS
VGS
ID = 1.0 A
VDD = 450 V
250 V
150 V
QG – Gate Chage - nC
V
GS
–
G
ate
to
Source
V
oltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
I
F–
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
VGS = 10 V
0 V
Pulsed
VF(S-D) – Source to Drain Voltage - V
t
rr–
Rev
erse
R
ecovery
Time
-n
s
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF – Diode Forward Current - A
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PDF描述 |
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| 2SK4070-ZK-E2-AY | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4076-ZK-E1-AY | 35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078-ZK-E1-AY | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4078 | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4070-ZK-E2-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4073LS | 功能描述:MOSFET N-CH 60V 90A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4074LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4075B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4075B-ZK-E1-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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