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参数资料
| 型号： | 2SK4092-A |
| 元件分类： | JFETs |
| 英文描述： | 21 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, MP-88, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 192K |
| 代理商： | 2SK4092-A |
Data Sheet D18776EJ1V0DS
2
2SK4092
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.0
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 10 A
4.0
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 10 A
0.34
0.4
Ω
Input Capacitance
Ciss
VDS = 10 V,
3240
pF
Output Capacitance
Coss
VGS = 0 V,
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 10 A,
38
ns
Rise Time
tr
VGS = 10 V,
15
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
58
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
50
nC
Gate to Source Charge
QGS
24
nC
Gate to Drain Charge
QGD
VDD = 450 V,
VGS = 10 V,
ID = 21 A
17
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 21 A, VGS = 0 V
0.9
1.5
V
Reverse Recovery Time
trr
IF = 21 A, VGS = 0 V,
480
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
6000
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
Ω
50
Ω
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
μ
Duty Cycle
≤ 1%
τ
PG.
50
Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
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| 2SK4094 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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