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参数资料
| 型号： | 2SK4108 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-16C1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 245K |
| 代理商： | 2SK4108 |
2SK4108
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Low drainsource ON resistance
: RDS (ON) = 0. 21Ω (typ.)
High forward transfer admittance
: |Yfs| = 14 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
20
A
Drain current
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
960
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4108(F) | 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 20A 500V TO3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 20A, 500V, TO3P |
| 2SK4108(F,T) | 功能描述:MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4108(S1V,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4108(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4111(Q,T) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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