参数资料
型号: 2SK4108
元件分类: JFETs
英文描述: 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, 2-16C1B, 3 PIN
文件页数: 5/6页
文件大小: 245K
代理商: 2SK4108
2SK4108
2009-09-29
5
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 4.08 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
1000
1
10
100
0.1
1
100
0.01
1000
10
EAS – Tch
800
600
400
200
0
25
50
75
100
125
150
1000
SAFE OPERATING AREA
Drain-source voltage VDS (V)
Drain
curren
t
I D
(A)
Channel temperature (initial) Tch (°C)
A
valanche
energy
E
AS
(
m
J)
Single pulse Ta=25℃
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
ID max (continuous)
DC OPEATION
Tc
= 25°C
100
μs *
1 ms *
VDSS max
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2SK4110 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
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2SK4108(F,T) 功能描述:MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK4108(S1V,E,S) 制造商:Toshiba America Electronic Components 功能描述:
2SK4108(STA1,E,S) 制造商:Toshiba America Electronic Components 功能描述:
2SK4111(Q,T) 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube