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参数资料
| 型号： | 2SK4171 |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 56K |
| 代理商： | 2SK4171 |
2SK4171
No. A0787-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=50A
35
60
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=50A, VGS=10V
5.5
7.2
m
RDS(on)2
ID=50A, VGS=4V
7.5
10.5
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
6900
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
740
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
540
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
48
ns
Rise Time
tr
See specified Test Circuit.
380
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
500
ns
Fall Time
tf
See specified Test Circuit.
370
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=100A
135
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=100A
18
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=100A
50
nC
Diode Forward Voltage
VSD
IS=100A, VGS=0V
1.0
1.2
V
Package Dimensions
unit : mm (typ)
7507-002
Switching Time Test Circuit
Avalanche Resistance Test Circuit
10.2
5.1
4.5
1.3
15.1
14.0
2.7
6.3
3.6
18.0
(5.6)
2.7
1.2
0.8
0.4
2.55
12
3
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
PW=10s
D.C.≤1%
P.G
50
G
S
D
ID=50A
RL=0.6
VDD=30V
VOUT
2SK4171
VIN
10V
0V
VIN
50
10V
0V
≥50
VDD
L
2SK4171
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4177 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4177_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4177-DL-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-DL-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4177-DL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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