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参数资料
| 型号： | 2SK4171 |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 56K |
| 代理商： | 2SK4171 |
2SK4171
No. A0787-4/5
A S O
VGS -- Qg
PD -- Ta
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Ambient Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
0
25
50
75
100
125
150
100
80
60
20
40
120
175
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
IT12429
Ambient Temperature, Ta --
°C
PD -- Tc
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
--
W
IT12426
0.1
1.0
2
3
5
7
2
10
3
5
7
2
0.1
IDP=400A
ID=100A
100
s
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
IT12425
0
50
150
100
0
2
4
6
1
3
5
8
7
9
10
VDS=30V
ID=100A
PW
≤10s
1.0
23
5
7
2
10
35
7
2
0
20
40
60
80
100
120
2.0
140
160
1.75
1.5
1.0
0.5
IT12427
100
35
7
10
s
0
20
40
60
80
100
120
140
160
40
60
50
70
80
75
90
30
20
10
IT12428
100
3
5
7
2
1000
3
5
7
Tc=25
°C
Single pulse
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4177 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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| 2SK4177-DL-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-DL-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4177-DL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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