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参数资料
| 型号： | 2SK4178-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 215K |
| 代理商： | 2SK4178-ZK-E2-AY |
Data Sheet D19080EJ1V0DS
3
2SK4178
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
ercentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
TC - Case Temperature -
°C
P
T-
Total
Power
Dissipati
on
-
W
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
I
D
-
Drain
Cur
rent
-
A
0.1
1
10
100
1000
0.1
1
10
100
ID(pulse)
ID(DC)
1i0 m
i
s
TC = 25
°C
Single pulse
1i m
i
s
Po
we
r D
iss
ipa
tio
n L
im
ite
d
RD
S(on)
Limi
ted
(V
GS
= 1
i 0
V)
PW
= 1
i
00
μs
VDS - Drain to Source Voltage - V
I
D
-
Drain
Cur
rent
-
A
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
TC - Case Temperature -
°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(t)
-
Transient
Therm
al
Resistance
-
°C/W
0.1
1
10
100
1000
Rth(ch-A) = 125
°C/W
Single pulse
Rth(ch-C) = 3.8
°C/W
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4179 | 制造商:SANYO 功能描述:MOSFET, N CH, 75V, 80A, TO-220AA Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 75V 80A TO-220AA 制造商:Sanyo 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 |
| 2SK4179GS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK418 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR |
| 2SK4181 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4181-TL-E | 功能描述:MOSFET N-CH 525V 7.5A ZP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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