- 您现在的位置：买卖IC网 > PDF目录71110 > 2SK4178-ZK-E2-AY 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA PDF资料下载
参数资料
| 型号： | 2SK4178-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 215K |
| 代理商： | 2SK4178-ZK-E2-AY |
Data Sheet D19080EJ1V0DS
4
2SK4178
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Current
-
A
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
I
D
-Drain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
01
23
45
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VDS = 10 V
Pulsed
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(t
h)
–
G
ate
to
Source
Threshold
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
-75
-25
25
75
125
175
VDS = VGS
ID = 250
μA
Tch - Channel Temperature -
°C
|y
fs
|-
Forward
Tr
ans
fer
A
dmittance
-
S
0.1
1
10
100
0.1
1
10
100
Tch =
55°C
25°C
VDS = 10 V
Pulsed
25°C
75°C
125°C
150°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
S
(on)
-Dr
ai
nto
S
ourc
eO
n-st
ate
Re
sist
ance
-m
Ω
0
5
10
15
20
1
10
100
1000
Pulsed
VGS = 4.5 V
10 V
ID - Drain Current - A
R
D
S
(on)
-Dr
ai
nto
S
ourc
eO
n-st
ate
Re
sist
ance
-m
Ω
0
5
10
15
0
5
10
15
20
Pulsed
ID = 30 A
9.6 A
VGS – Gate to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4178(1)-S27-AY | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SC1623A | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC2712P | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1815-3 | VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA18153 | VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4179 | 制造商:SANYO 功能描述:MOSFET, N CH, 75V, 80A, TO-220AA Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 75V 80A TO-220AA 制造商:Sanyo 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 |
| 2SK4179GS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK418 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR |
| 2SK4181 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4181-TL-E | 功能描述:MOSFET N-CH 525V 7.5A ZP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。