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参数资料
| 型号： | 2SK4178-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 48000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 215K |
| 代理商： | 2SK4178-ZK-E2-AY |
Data Sheet D19080EJ1V0DS
5
2SK4178
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
R
DS(on)
-Drain
to
Sou
rce
O
n-s
tate
Resis
tance
-m
Ω
0
5
10
15
20
-75
-25
25
75
125
175
VGS = 4.5 V, ID = 12 A
Pulsed
10 V, 30 A
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
10
100
1000
10000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on
),
t
r,
t
d(of
f),
t
f-
S
w
itchi
ng
Time
-
ns
1
10
100
0.1
1
10
100
tf
td(off)
VDD = 15 V
VGS = 10 V
RG = 3
Ω
td(on)
tr
ID - Drain Current - A
V
DS
–
Dra
in
to
Source
Vol
tage
-
V
0
5
10
15
20
25
30
010
20
30
0
2
4
6
8
10
VGS
VDS
ID = 30 A
VDD = 24 V
15 V
QG – Gate Charge - nC
V
GS
–
G
ate
to
Source
V
oltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F–
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
10 V
Pulsed
VGS = 4.5 V
0 V
VF(S-D) – Source to Drain Voltage - V
t
rr–
R
eve
rse
Recovery
Time
-ns
1
10
100
1000
0.1
1
10
100
VGS = 0 V
di/dt = 100 A/
μs
IF – Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| 2SK418 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR |
| 2SK4181 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4181-TL-E | 功能描述:MOSFET N-CH 525V 7.5A ZP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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