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参数资料
| 型号： | 2SK4202-S19-AY |
| 元件分类： | JFETs |
| 英文描述： | 84 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 189K |
| 代理商： | 2SK4202-S19-AY |
Data Sheet D19229EJ1V0DS
4
2SK4202
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Cu
rrent
-
A
0
50
100
150
200
250
0
0.5
1
1.5
2
2.5
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
I
D
-Drain
Current
-
A
0.001
0.01
0.1
1
10
100
1000
01
2
3
45
6
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-Gate
to
Source
Cut
-off
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Forward
T
ransfer
A
d
mittance
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
5
10
15
20
25
0.1
1
10
100
1000
VGS = 10 V
Pulsed
ID - Drain Current - A
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
5
10
15
20
25
0
5
10
15
20
42 A
84 A
ID = 16.8 A
Pulsed
VGS - Gate to Source Voltage - V
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4203LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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| 2SK4207 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Swiching Regulator Applications |
| 2SK4207(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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