参数资料
型号: 2SK4202-S19-AY
元件分类: JFETs
英文描述: 84 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, TO-220, 3 PIN
文件页数: 6/8页
文件大小: 189K
代理商: 2SK4202-S19-AY
Data Sheet D19229EJ1V0DS
6
2SK4202
PACKAGE DRAWING (Unit: mm)
TO-220
4.8 MAX.
1 2 3
10.2 MAX.
8.7 TYP.
3.6±0.2
4
2.8±0.3
1.52±0.2
0.8±0.1
2.54 TYP.
6.3
MIN.
3.0
TYP.
15.9
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.4±0.2
φ
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
相关PDF资料
PDF描述
2SK4204LS 20 A, 45 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4212-ZK-E2-AY 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4212-ZK-E2-AY 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4212-ZK-E1-AY 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK4212-ZK-E2-AY 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
相关代理商/技术参数
参数描述
2SK4203LS 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4204LS 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4207 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Swiching Regulator Applications
2SK4207(Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR
2SK4209 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件