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参数资料
| 型号： | 2SK4202-S19-AY |
| 元件分类： | JFETs |
| 英文描述： | 84 A, 60 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 189K |
| 代理商： | 2SK4202-S19-AY |
Data Sheet D19229EJ1V0DS
7
2SK4202
MARKING INFORMATION
K4202
Lot code
NEC
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
The 2SK4202 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Recommended
Condition Symbol
Wave soldering
Maximum temperature (Solder temperature): 260
°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
Maximum temperature (Pin temperature): 350
°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Caution Do not use different soldering methods together (except for partial heating).
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PDF描述 |
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| 2SK4204LS | 20 A, 45 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4212-ZK-E2-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4212-ZK-E2-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4212-ZK-E1-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4212-ZK-E2-AY | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4203LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4204LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4207 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Swiching Regulator Applications |
| 2SK4207(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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