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参数资料
| 型号： | 2STR1215 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 9/9页 |
| 文件大小： | 178K |
| 代理商： | 2STR1215 |
2STR1215
9/9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2STR1215_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low voltage fast-switching NPN power transistor |
| 2STR1230 | 功能描述:两极晶体管 - BJT NPN power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2STR1240 | 功能描述:TRANS NPN 40V 1.5A SOT23 制造商:stmicroelectronics 系列:* 零件状态:有效 标准包装:3,000 |
| 2STR2160 | 功能描述:两极晶体管 - BJT LOW VOLTAGE FAST SWITCHING PNP POWER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2STR2215 | 功能描述:两极晶体管 - BJT Lo Vltg FAST SWITCH Hi GAIN PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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