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参数资料
| 型号： | 45IZ |
| 厂商： | Intersil Corporation |
| 英文描述： | 5V or 12V Single Synchronous Buck Pulse-Width Modulation (PWM) Controller |
| 中文描述： | 单5V或12V同步降压脉宽调制（PWM）控制器 |
| 文件页数： | 5/16页 |
| 文件大小： | 302K |
| 代理商： | 45IZ |
www.DataSheet4U.com
13
FN6305.3
November 15, 2006
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. The worst case
response time can be either at the application or removal of
load. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q1 turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q1 and the source of Q2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors may
be needed. For surface mount designs, solid tantalum
capacitors can also be used, but caution must be exercised
with regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge current at
power-up. Some capacitor series available from reputable
manufacturers are surge current tested.
MOSFET Selection/Considerations
The ISL6545 requires 2 N-Channel power MOSFETs. These
should be selected based upon rDS(ON), gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for both the upper
and the lower MOSFETs. These losses are distributed between
the two MOSFETs according to duty factor. The switching
losses seen when sourcing current will be different from the
switching losses seen when sinking current. When sourcing
current, the upper MOSFET realizes most of the switching
losses. The lower switch realizes most of the switching
losses when the converter is sinking current (see the
equations below). These equations assume linear voltage-
current transitions and do not adequately model power loss
due the reverse-recovery of the upper and lower MOSFET’s
body diode. The gate-charge losses are dissipated by the
ISL6545 and don't heat the MOSFETs. However, large gate-
charge increases the switching interval, tSW which increases
the MOSFET switching losses. Ensure that both MOSFETs
are within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
When operating with a 12V power supply for VCC (or down
to a minimum supply voltage of 6.5V), a wide variety of N-
MOSFETs can be used. Check the absolute maximum VGS
rating for both MOSFETs; it needs to be above the highest
VCC voltage allowed in the system; that usually means a
20V VGS rating (which typically correlates with a 30V VDS
maximum rating). Low threshold transistors (around 1V or
below) are not recommended, for the reasons explained in
the next paragraph.
For 5V only operation, given the reduced available gate bias
voltage (5V), logic-level transistors should be used for both
N-MOSFETs. Look for rDS(ON) ratings at 4.5V. Caution
should be exercised with devices exhibiting very low
VGS(ON) characteristics. The shoot-through protection
present aboard the ISL6545 may be circumvented by these
MOSFETs if they have large parasitic impedences and/or
capacitances that would inhibit the gate of the MOSFET from
being discharged below its threshold level before the
complementary MOSFET is turned on. Also avoid MOSFETs
with excessive switching times; the circuitry is expecting
transitions to occur in under 50ns or so.
tRISE =
L x ITRAN
VIN - VOUT
tFALL =
L x ITRAN
VOUT
PLOWER = Io
2 x r
DS(ON) x (1 - D)
Where: D is the duty cycle = VOUT / VIN,
tSW is the combined switch ON and OFF time, and
FSW is the switching frequency.
Losses while Sourcing Current
Losses while Sinking Current
P
LOWER
Io
2
r
DS ON
()
×
1D
–
()
×
1
2
--- Io
V
IN
×
t
SW
F
S
×
+
=
P
UPPER
Io
2
r
DS ON
()
×
D
×
1
2
--- Io
V
IN
×
t
SW
F
S
×
+
=
PUPPER = Io
2 x r
DS(ON) x D
ISL6545, ISL6545A
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