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参数资料
| 型号： | 48SD1616RPFH |
| 厂商： | MAXWELL TECHNOLOGIES |
| 元件分类： | DRAM |
| 英文描述： | 256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, DFP72 |
| 封装： | DFP-72 |
| 文件页数： | 42/42页 |
| 文件大小： | 596K |
| 代理商： | 48SD1616RPFH |
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48SD1616
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (4-Meg X 16-Bit X 4-Banks) SDRAM
01.07.05 REV 4
Read with auto-precharge (READ A): This command automatically performs a precharge operation after a
burst read with a burst length of 1, 2, 4, or 8.
Column address strobe and write command (WRIT): This command starts a write operation. When the
burst write mode is selected, the column address (AY0 to AY8) and the bank select address (BA0/BA1)
become the burst write start address. When the single write mode is selected, data is only written to the
location specified by the column address (AY0 to AY8) and bank select address(BA0/BA1).
Write with auto-precharge (WRIT A): This command automatically performs a precharge operation after a
burst write with a length of 1, 2, 4, or 8, or after a single write operation.
Row address strobe and bank activate ( ACTV): This command activates the bank that is selected by
BA0/BA1 (BS) and determines the row address (AX0 to AX12). When BA0 and BA1 are Low, bank 0 is
activated. When BA0 is Low, and BA1 is High, bank 1 is activated. When BA0 is High and BA1 is Low, bank
2 is activated. When BA0 and BA1 are High, bank 3 is activated.
Precharge select bank (PRE): This command starts precharge operation for the bank selected by BA0/
BA1. If BA0 and BA1 are Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0
is High and BA1 is Low, bank 2 is selected. If BA0 and BA1 are High, bank 3 is selected.
Precharge all banks (PALL): This command starts a precharge operation for all banks.
Refresh (REF/SELF): This command starts the refresh operation. There are two types of refresh
operations; one is auto-refresh, and the other is self-refresh1. For details, refer to the CKE truth table
section.
Mode register set (MRS): The SDRAM has a mode register that defines how it operates. The mode register
is specified by the address pins (A0 to A12, BA0 andBA1) at the mode register set cycle. For details, refer to
the mode register configuration. After power on, the contents of the mode register are undefined, execute
the mode register set command to set up the mode register.
1. Self refresh should only be used at temperatures below 70 °C.
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| 48SD1616RPFI | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 48SD1616RPFK | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 4-Meg X 16-Bit X 4-Banks |
| 48SD3208 | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFE | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
| 48SD3208RPFH | 制造商:MAXWELL 制造商全称:Maxwell Technologies 功能描述:256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks |
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