- 您现在的位置：买卖IC网 > PDF目录30702 > 4AK16 (Hitachi,Ltd.) Silicon N-Channel Power MOS FET Array PDF资料下载
参数资料
| 型号： | 4AK16 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Power MOS FET Array |
| 中文描述： | 硅N沟道功率MOS场效应管阵列 |
| 文件页数： | 3/9页 |
| 文件大小： | 50K |
| 代理商： | 4AK16 |
4AK16
3
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.12
0.18
I
D = 5 A
V
GS = 10 V*
1
—
0.17
0.25
I
D = 5 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
3.5
6.0
—
S
I
D = 5 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
400
—
pF
V
DS = 10 V
Output capacitance
Coss
—
220
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
60
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—5
—ns
I
D = 5 A
Rise time
t
r
—
55
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
140
—
ns
R
L = 6
Fall time
t
f
—90—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = 5 A, VGS = 0
dIF/dt = 50 A/
s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 4AK17 | FILTER LINE 250VAC 25A PANEL |
| 4AK18 | Silicon N-Channel Power MOS FET Array |
| 4AK19 | Silicon N Channel MOS FET High Speed Power Switching |
| 4AK20 | Silicon N-Channel Power MOS FET Array |
| 4AK21 | Silicon N-Channel Power MOS FET Array |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 4AK17 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK18 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK19 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 4AK20 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
| 4AK21 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel Power MOS FET Array |
发布紧急采购，3分钟左右您将得到回复。