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参数资料
| 型号： | 4AM16 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET阵列（不适用沟道/页沟道功率MOSFET的阵列） |
| 文件页数： | 4/7页 |
| 文件大小： | 48K |
| 代理商： | 4AM16 |
4AM16
4
Electrical Characteristics (Ta = 25°C)
P channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state R
DS(on)
—
0.15
0.20
I
D = –4 A, VGS = –10 V*
1
resistance
—
0.20
0.27
I
D = –4 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
3.5
6.0
—
S
I
D = –4 A
V
DS = –10 V*
1
Input capacitance
Ciss
—
900
—
pF
V
DS = –10 V
Output capacitance
Coss
—
460
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
130
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—8
—
ns
I
D = –4 A
Rise time
t
r
—50
—
ns
V
GS = –10 V
Turn-off delay time
t
d(off)
—
180
—
ns
R
L = 7.5
Fall time
t
f
—95
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.2
—
V
I
F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
185
—
ns
I
F = –8 A, VGS = 0,
diF/dt = 50 A/s
Note
1. Pulse Test
See characteristics curves of 2SJ172
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