参数资料
型号: 4AM16
厂商: Hitachi,Ltd.
英文描述: Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列)
中文描述: 硅N-Channel/P-Channel功率MOS FET阵列(不适用沟道/页沟道功率MOSFET的阵列)
文件页数: 6/7页
文件大小: 48K
代理商: 4AM16
4AM16
6
50
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
(N–channel)
10
1
0.1
0.05
0.1
0.3
1
3
10
30
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
s
Ta = 25 °C
1 ms
DC
Operation
(Tc
=
25
°C)
20
2
0.2
0.5
5
–50
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
(P–channel)
–10
–1
–0.1
–0.05
–0.1 –0.3
–1
–3
–10
–30
–100
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
s
Ta = 25 °C
1 ms
DC
Operation
(Tc
=
25
°C)
–20
–2
–0.2
–0.5
–5
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