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参数资料
| 型号： | 4MBI100T-060 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 4MBI100T-060 |
| 中文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-24 |
| 文件页数： | 13/14页 |
| 文件大小： | 622K |
| 代理商： | 4MBI100T-060 |
H04-004-03
14
MS5F 5431
a
b
c
8
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
Note
Lower limit Upper limit
Electrical
Leakage current
ICES
-
USL×2
mA
characteristic
±IGES
-
USL×2
A
Gate threshold voltage
VGE(th)
LSL×0.8
USL×1.2
mA
Saturation voltage
VCE(sat)
-
USL×1.2
V
Forward voltage
VF
-
USL×1.2
V
Thermal
IGBT
VGE
-
USL×1.2
mV
resistance
or
VCE
FWD
VF
-
USL×1.2
mV
Isolation voltage
Viso
Broken insulation
-
Visual
Visual inspection
inspection
Peeling
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Number
of
sample
Accept-
ance
number
1 High temperature
Test Method 101
5
( 1 : 0 )
Reverse Bias
Test temp.
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
: VC = 0.8×VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
2 High temperature
Test Method 101
5
( 1 : 0 )
Bias (for gate)
Test temp.
: Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage
: VC = VGE = +20V or -20V
Bias Method
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
3 Temperature
Test Method 102
5
( 1 : 0 )
Humidity Bias
Test temp.
: 85±2 oC
Condition code C
Relative humidity
: 85±5%
Bias Voltage
: VC = 0.8×VCES
Bias Method
: Applied DC voltage to C-E
VGE = 0V
Test duration
: 1000hr.
4 Intermitted
ON time
: 2 sec.
Test Method 106
5
( 1 : 0 )
Operating Life
OFF time
: 18 sec.
(Power cycle)
Test temp.
:
Tj=100±5 deg
( for IGBT )
Tj ≦ 150 ℃, Ta=25±5 ℃
Number of cycles
: 15000 cycles
E
nd
ur
an
ce
T
es
ts
E
nd
ur
an
ce
T
es
ts
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