参数资料
型号: 4MBI100T-060
厂商: FUJI ELECTRIC CO LTD
元件分类: IGBT 晶体管
英文描述: 4MBI100T-060
中文描述: 100 A, 600 V, N-CHANNEL IGBT
封装: MODULE-24
文件页数: 3/14页
文件大小: 622K
代理商: 4MBI100T-060
H04-004-03
14
MS5F 5431
a
b
c
11
0
50
100
150
200
10
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
Collector current : Ic [ A ]
0
50
100
150
200
10
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C
Collector current : Ic [ A ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
5
10
100
10
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C
Gate resistance : Rg [ ohm ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
0
100
200
0
5
10
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Collector current : Ic [ A ]
10
100
500
0
10
20
30
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0
200
400
600
800
0
100
200
300
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t
:I
c
[A
]
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