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参数资料
| 型号： | 5082-2830 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 46K |
| 代理商： | 5082-2830 |
3-62
Schottky Barrier Diode Quads
for Double Balanced Mixers
Technical Data
Features
Small Size
Eases Broad Band Designs
Tight Match
Improves Mixer Balance
Improved Balance over
Temperature
Rugged Design
Description/Applications
This matched diode quad uses a
monolithic array of Schottky
diodes interconnected in ring
configuration. The relative
proximity of the diode junction on
the wafer assures uniform
electrical characteristics and
temperature tracking.
These diodes are designed for use
in double balanced mixers, phase
detectors, AM modulators, and
pulse modulators requiring
wideband operation and small
size. the low barrier diodes allow
for optimum mixer noise figure at
lower than conventional local
oscillator levels. the wider
dynamic range of the medium
barrier diodes allows for better
distortion performance.
Note: For new designs, the
HSMS-820X series of surface mount
microwave diodes are recommended.
5082-2830
Outline E4
C
P = 0.07 pF diagonal
C
P = 0.09 pF adjacent
DIMENSIONS IN MILLIMETERS AND (INCHES).
2.79 (0.110)
2.29 (0.090)
0.56 (0.022)
0.46 (0.018)
4.06 (0.160)
3.56 (0.140)
0.15 (0.006)
0.10 (0.004)
1.27 (0.05) MAX.
0.64 (0.025) MAX.
Maximum Ratings
Operating and Storage Temperature Range
E4 ............................................................................. -65
°Cto+125°C
DC Power Dissipation ............................................... 75 mW per Juction
Derated linearly to zero at maximum rated temperatures
(measured in infinite heat sink at T
CASE = 25°C).
Soldering Temperature
E4 ............................................................................. 220
°C for 10 sec
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
5965-8848E
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-2835 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T25 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T50 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835 | 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY |
| 5082-2835_1008 | 制造商:ASI 制造商全称:ASI 功能描述:SCHOTTKY BARRIER DIODE |
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