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参数资料
| 型号： | 5962-9960702QXA |
| 元件分类： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, CDFP36 |
| 封装： | BOTTOM BRAZED, SHIELDED, DFP-36 |
| 文件页数： | 11/15页 |
| 文件大小： | 121K |
| 代理商： | 5962-9960702QXA |
5
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-55
°C to +125°C for (C) screening and -40oC to +125oC for (W) screening) (V
DD = 3.3V + 0.3)
Notes:
* Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 101 9.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
VIH
High-level input voltage
(CMOS)
2.0
V
IL
Low-level input voltage
(CMOS)
0.8
V
VOL1
Low-level output voltage
IOL = 8mA, VDD =3.0V
0.4
V
VOL2
Low-level output voltage
IOL = 200A,VDD =3.0V
0.08
V
OH1
High-level output voltage
I
OH = -4mA,VDD =3.0V
2.4
V
VOH2
High-level output voltage
IOH = -200A,VDD =3.0V
VDD-0.10
V
C
IN
1
Input capacitance
= 1MHz @ 0V
10
pF
C
IO
1
Bidirectional I/O capacitance
= 1MHz @ 0V
12
pF
IIN
Input leakage current
VSS < VIN < VDD, VDD = VDD (max)
-2
2
A
IOZ
Three-state output leakage current
0V < VO < VDD
VDD = VDD (max)
G = V
DD (max)
-2
2
A
IOS
2, 3
Short-circuit output current
0V < VO < VDD
-90
90
mA
I
DD(OP)
Supply current operating
@ 1MHz
Inputs: V
IL = 0.8V,
V
IH = 2.0V
IOUT = 0mA
VDD = VDD (max)
125
mA
IDD1(OP)
Supply current operating
@40MHz
Inputs: VIL = 0.8V,
VIH = 2.0V
I
OUT = 0mA
V
DD = VDD (max)
180
mA
IDD2(SB)
Nominal standby supply current
@0MHz
Inputs: VIL = VSS
IOUT = 0mA
E = VDD - 0.5
VDD = VDD (max)
V
IH = V DD - 0.5V
6
40
mA
-55
°C and 25°C
-40oC and 25oC
+125
°C
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