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参数资料
| 型号： | 5962F9683401VCA |
| 厂商： | INTERSIL CORP |
| 元件分类： | 缓冲放大器 |
| 英文描述： | QUAD BUFFER AMPLIFIER, CDIP14 |
| 封装： | SIDE BRAZED, CERAMIC, DIP-14 |
| 文件页数： | 2/11页 |
| 文件大小： | 174K |
| 代理商： | 5962F9683401VCA |
10
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Burn-In Circuit
HS-1412RH CERDIP
NOTES:
1. R1 = 1k
, ±5%, 1/4W [Per Socket].
2. C1 = C2 = 0.01
F [Per Socket] or 0.1F (Per Row) Minimum.
3. D1 = D2 = 1N4002 or Equivalent [Per Board].
4. D3 = D4 = 1N4002 or Equivalent [Per Socket].
5. (-V) + (+V) = 11V
±1.0V.
6. 20mA < (ICC, IEE) < 32mA.
7. -50mV < VOUT < +50mV.
Irradiation Circuit
HS-1412RH CERDIP
NOTES:
8. R1 = 1k
±5%
9. C1 = 0.1
F
10. V+ = +5.0V
±0.5V
11. V- = -5.0V
±0.5V
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V+
C1
D1
D3
D2
C2
V-
D4
R1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V+
C1
V-
R1
C1
HS-1412RH
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