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参数资料
| 型号： | 5SDD11T2800 |
| 厂商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1285 A, 2800 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 2/5页 |
| 文件大小： | 74K |
| 代理商： | 5SDD11T2800 |
5SDD 11T2800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/272/08 Jul-10
2 of 5
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse
voltage
Tj = -40 ÷ 160 °C
5SDD 11T2800
5SDD 11T2600
2 800
2 600
V
IFAVm
Average forward current
Tc = 85 °C
1 285
A
IFRMS
RMS forward current
Tc = 85 °C
2 019
A
IRRM
Repetitive reverse current
VR = VRRM
30
mA
tp = 8.3 ms
16 000
A
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 10 ms
15 000
A
tp = 8.3 ms
1 066 000
A
2s
I
2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 10 ms
1 125 000
A
2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 160
°C
TSTG
Storage temperature range
-40 ÷ 160
°C
Unless otherwise specified Tj = 160 °C
Value
Characteristics
min
typ
max
Unit
VT0
Threshold voltage
0.933
V
rT
Forward slope resistance
IF1 = 1 500 A, IF2 = 4 500 A;
0.242
m
VFM
Maximum forward voltage
IFM = 1 500 A
1.300
V
Qrr
Recovered charge
VR = 100 V, IFM = 1 000 A, di/dt = -30 A/s
2 200
C
Unless otherwise specified Tj = 160 °C
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