参数资料
型号: 5SDD11T2800
厂商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分类: 整流器
英文描述: 1285 A, 2800 V, SILICON, RECTIFIER DIODE
文件页数: 3/5页
文件大小: 74K
代理商: 5SDD11T2800
5SDD 11T2800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DV/272/08 Jul-10
3 of 5
Thermal Parameters
Value
Unit
double side cooling
32
K/kW
anode side cooling
50
Rthjc
Thermal resistance
junction to case
cathode side cooling
88
double side cooling
8
K/kW
Rthch
Thermal resistance
case to heatsink
single side cooling
16
Transient Thermal Impedance
i
1
2
3
4
5
τ
i ( s )
0.7033
0.2185
0.0588
0.0042
0.0006
Ri( K/kW )
11.56
10.08
7.84
2.38
0.13
0
5
10
15
20
25
30
35
0,001
0,01
0,1
1
10
Square w ave pulse duration t
d ( s )
T
ra
n
s
ie
n
t
th
e
rm
a
l
im
p
e
d
a
n
c
e
ju
n
c
ti
o
n
to
c
a
s
e
Z
th
jc
(
K
/k
W
)
Analytical function for transient
thermal impedance
=
τ
=
5
1
))
/
exp(
1
(
i
thjc
t
R
Z
Conditions:
Fm = 10 ± 2 kN, Double side cooled
Correction for periodic
waveforms
180° sine:
2.3 K/kW
180° rectangular:
3.1 K/kW
120° rectangular:
5.1 K/kW
60° rectangular:
8.7 K/kW
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
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