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参数资料
| 型号： | 6CWT10FN-E |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | ROHS COMPLIANT, DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 102K |
| 代理商： | 6CWT10FN-E |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94662
2
Revision: 04-Jun-09
6CUT10-E, 6CWT10FN-E
Vishay High Power Products High Performance Schottky
Generation 5.0, 2 x 3 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
MAX.
UNITS
Forward voltage drop per leg
VFM (1)
3 A
TJ = 25 °C
0.720
0.79
V
6 A
0.825
0.91
3 A
TJ = 125 °C
0.60
0.63
6 A
0.69
0.74
Reverse leakage current per leg
IRM (1)
TJ = 25 °C
VR = Rated VR
0.3
30
A
TJ = 125 °C
0.3
1
mA
Junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
114
-
pF
Series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
-
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
4.7
°C/W
Maximum thermal resistance,
junction to case per device
2.35
Typical thermal resistance,
case to heatsink
RthCS
0.3
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style I-PAK
6CUT10
Case style D-PAK
6CWT10FN
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