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参数资料
| 型号： | 6CWT10FN-E |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | ROHS COMPLIANT, DPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 102K |
| 代理商： | 6CWT10FN-E |
Document Number: 94662
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Jun-09
3
6CUT10-E, 6CWT10FN-E
High Performance Schottky
Generation 5.0, 2 x 3 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
1
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I F
-
Instantaneous
Forwar
d
Current
(A)
VFM - Forward Voltage Drop (V)
T
J = 175 °C
T
J = 25 °C
T
J = 125 °C
0
5
10
15
20
25
30
35
40
45
I R
-
Re
ver
se
Current
(mA)
VR - Reverse Voltage (V)
0.0001
0.001
0.01
0.1
1
10
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
1000
100
10
0
5
10
15
20
25
30
35
40
45
C
T
-
J
unction
Capacitance
(pF)
VR - Reverse Voltage (V)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Thermal
Impedance
Z
thJC
(°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(Thermal resistance)
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