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参数资料
| 型号： | 6CWT10FN-E |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封装： | ROHS COMPLIANT, DPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 102K |
| 代理商： | 6CWT10FN-E |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94662
4
Revision: 04-Jun-09
6CUT10-E, 6CWT10FN-E
Vishay High Power Products High Performance Schottky
Generation 5.0, 2 x 3 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
012335
Allo
w
ab
le
Case
T
e
mperature
(°C)
IF(AV) - Average Forward Current (A)
145
160
155
150
165
170
175
180
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R applied
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Av
e
ra
g
e
P
o
wer
Loss
(W)
IF(AV) - Average Forward Current (A)
0
0.5
1.5
1
2
2.5
270°
180°
120°
90°
72°
RMS limit
DC
tp - Square Wave Pulse Duration (s)
I FSM
-
Non-Repetitive
Sur
g
e
Current
(A)
10
100
1000
10 000
10
100
1000
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