参数资料
型号: 71M6543F-IGT/F
厂商: Maxim Integrated Products
文件页数: 131/154页
文件大小: 0K
描述: IC ENERGY METERING
标准包装: 90
系列: *
71M6543F/71M6543G Data Sheet
6.2
Recommended External Components
Table 87: Recommended External Components
Name
C1
C2
CSYS
CVDD
CVLCD
XTAL
CXS
CXL
From
V3P3A
V3P3D
V3P3SYS
VDD
VLCD
XIN
XIN
XOUT
To
GNDA
GNDD
GNDD
GNDD
GNDD
XOUT
GNDA
GNDA
Function
Bypass capacitor for 3.3 V supply
Bypass capacitor for 3.3 V output
Bypass capacitor for V3P3SYS
Bypass capacitor for VDD
Bypass capacitor for VLCD pin
32.768 kHz crystal – electrically
equivalent to ECS .327-12.5-17X or
Vishay XT26T, load capacitance 12.5 pF
Load capacitor values for crystal depend
on crystal specifications and board
parasitics. Nominal values are based on
4 pF board capacitance and include an
allowance for chip capacitance.
Value
≥ 0.1 ± 20%
0.1 ± 20%
≥ 1.0 ± 30%
0.1 ± 20%
≥ 0.1 ± 20%
32.768
15 ± 10%
10 ± 10%
Unit
μ F
μ F
μ F
μ F
μ F
kHz
pF
pF
6.3
Recommended Operating Conditions
Unless otherwise specified, all parameters listed under 6.4 Performance Specifications and 6.5 Timing
Specifications are valid over the Recommended Operating Conditions provided in Table 88 below.
Table 88: Recommended Operating Conditions
Parameter
V3P3SYS and V3P3A Supply Voltage for precision
metering operation (MSN mode). Voltages at
VBAT and VBAT_RTC need not be present.
VBAT Voltage (BRN mode). V3P3SYS is below
the 2.8 V comparator threshold. Either V3P3SYS
or VBAT_RTC must be high enough to power the
RTC module.
VBAT_RTC Voltage. VBAT_RTC is not needed to
support the RTC and non-volatile memory unless
V3P3SYS<2.0 V
Operating Temperature
Condition
VBAT=0 V to 3.8 V
VBAT_RTC =0 V to
3.8 V
V3P3SYS < 2.8 V
and
Max(VBAT_RTC,
V3P3SYS) > 2.0 V
V3P3SYS<2.0 V
Min
3.0
2.5
2.0
-40
Typ
Max
3.6
3.8
3.8
+85
Unit
V
V
V
oC
Notes:
1. GNDA and GNDD must be connected together.
2. V3P3SYS and V3P3A must be connected together.
v2
131
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