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参数资料
| 型号： | 74LVC1G74GD,125 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/25页 |
| 文件大小： | 0K |
| 描述： | IC FLIP-FLOP D POS-EDGE 8-XSON |
| 产品培训模块： | Logic Packages |
| 特色产品： | MicroPak? |
| 标准包装： | 3,000 |
| 系列： | 74LVC |
| 功能： | 设置（预设）和复位 |
| 类型： | D 型 |
| 输出类型： | 差分 |
| 元件数： | 1 |
| 每个元件的位元数： | 1 |
| 频率 - 时钟： | 200MHz |
| 延迟时间 - 传输： | 2.5ns |
| 触发器类型： | 正边沿 |
| 输出电流高，低： | 32mA，32mA |
| 电源电压： | 1.65 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-XFDFN |
| 包装： | 带卷 (TR) |
| 其它名称： | 568-9313-2 74LVC1G74GD,125-ND 74LVC1G74GD-G 74LVC1G74GD-G-ND 935286752125 |
74LVC1G74
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 12 — 2 April 2013
10 of 25
NXP Semiconductors
74LVC1G74
Single D-type flip-flop with set and reset; positive edge trigger
[1]
Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD VCC2 fi N+ (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L VCC
2
f
o) = sum of outputs.
trec
recovery time
SD or RD; see Figure 9
VCC = 1.65 V to 1.95 V
1.9
-
1.9
-
ns
VCC = 2.3 V to 2.7 V
1.4
-
1.4
-
ns
VCC = 2.7 V
1.3
-
1.3
-
ns
VCC = 3.0 V to 3.6 V
+1.2
3.0
-
+1.2
-
ns
VCC = 4.5 V to 5.5 V
1.0
-
1.0
-
ns
tsu
set-up time
D to CP; see Figure 8
VCC = 1.65 V to 1.95 V
2.9
-
2.9
-
ns
VCC = 2.3 V to 2.7 V
1.7
-
1.7
-
ns
VCC = 2.7 V
1.7
-
1.7
-
ns
VCC = 3.0 V to 3.6 V
1.3
0.5
-
1.3
-
ns
VCC = 4.5 V to 5.5 V
1.1
-
1.1
-
ns
th
hold time
D to CP; see Figure 8
VCC = 1.65 V to 1.95 V
1.5
-
1.5
-
ns
VCC = 2.3 V to 2.7 V
1.0
-
1.0
-
ns
VCC = 2.7 V
1.0
-
1.0
-
ns
VCC = 3.0 V to 3.6 V
1.0
0.6
-
1.0
-
ns
VCC = 4.5 V to 5.5 V
1.0
-
1.0
-
ns
fmax
maximum
frequency
CP; see Figure 8
VCC = 1.65 V to 1.95 V
80
-
80
-
MHz
VCC = 2.3 V to 2.7 V
175
-
175
-
MHz
VCC = 2.7 V
175
-
175
-
MHz
VCC = 3.0 V to 3.6 V
175
280
-
175
-
MHz
VCC = 4.5 V to 5.5 V
200
-
200
-
MHz
CPD
power dissipation
capacitance
VI = GND to VCC;
VCC =3.3 V
-15-
-
pF
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
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