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参数资料
| 型号： | 76132P |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 第75A，30V的，0.011 Ohm的N通道，逻辑电平UltraFET功率MOSFET |
| 文件页数： | 2/10页 |
| 文件大小： | 110K |
| 代理商： | 76132P |
6-131
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30
V
30
V
±
16
V
75
44
41
Figure 4
A
A
A
Figures 6, 17, 18
120
0.97
W
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
-40 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9, 10)
-
0.0085
0.011
I
D
= 44A, V
GS
= 5V (Figure 9)
-
0.013
0.016
I
D
= 41A, V
GS
= 4.5V (Figure 9)
-
0.015
0.018
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
1.03
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220, TO-262 and TO-263
-
-
62
o
C/W
SWITCHING SPECIFICATIONS
(VGS = 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
41A,
R
L
= 0.366
, V
GS
=
4.5V,
R
GS
= 6.2
(Figures 15, 21, 22)
-
-
185
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
105
-
ns
Turn-Off Delay Time
t
d(OFF)
-
33
-
ns
Fall Time
t
f
-
42
-
ns
Turn-Off Time
t
OFF
-
-
113
ns
HUF76132P3, HUF76132S3S
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