参数资料
型号: 76132P
厂商: Fairchild Semiconductor Corporation
英文描述: 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述: 第75A,30V的,0.011 Ohm的N通道,逻辑电平UltraFET功率MOSFET
文件页数: 6/10页
文件大小: 110K
代理商: 76132P
6-135
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
C
OSS
2500
1500
0
0
5
15
25
C
2000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
30
500
C
ISS
C
RSS
10
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 15V
2
30
50
0
Q
g
, GATE CHARGE (nC)
10
I
D
= 75A
I
D
= 51A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
20
40
100
20
30
40
50
0
400
300
200
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 41A, R
L
= 0.312
t
d(OFF)
t
d(ON)
t
r
t
f
20
30
40
50
0
400
200
100
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 75A, R
L
= 0.20
300
t
r
t
f
t
d(OFF)
t
d(ON)
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
HUF76132P3, HUF76132S3S
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