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| 型号： | 76132P |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 第75A，30V的，0.011 Ohm的N通道，逻辑电平UltraFET功率MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 110K |
| 代理商： | 76132P |
6-133
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
Unless Otherwise Specified
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
2
0.1
1
10
-2
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I
25
150 - T
C
125
V
GS
= 10V
I
D
,
2000
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
100
V
GS
= 5V
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
1000
10
I
D
,
10
10ms
T
J
= MAX RATED
T
C
= 25
o
C
1ms
100
μ
s
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
BV
DSS MAX
= 30V
1
10
100
0.01
500
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
HUF76132P3, HUF76132S3S
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