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参数资料
| 型号： | 8ETH06SPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, D2PAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 99K |
| 代理商： | 8ETH06SPBF |
Document Number: 94027
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 21-May-08
1
Hyperfast Rectifier,
8 A FRED PtTM
8ETH06SPbF/8ETH06-1PbF
Vishay High Power Products
FEATURES
Hyperfast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for Q101 level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
trr (typical)
18 ns
IF(AV)
8 A
VR
600 V
8ETH06SPbF
Anode
1
3
Base
cathode
2
N/C
D2PAK
8ETH06-1PbF
TO-262
Anode
1
3
2
N/C
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Peak repetitive reverse voltage
VRRM
600
V
Average rectified forward current
IF(AV)
TC = 144 °C
8
A
Non-repetitive peak surge current
IFSM
TJ = 25 °C
90
Peak repetitive forward current
IFM
16
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 A
600
-
V
Forward voltage
VF
IF = 8 A
-
2.0
2.4
IF = 8 A, TJ = 150 °C
-
1.3
1.8
Reverse leakage current
IR
VR = VR rated
-
0.3
50
A
TJ = 150 °C, VR = VR rated
-
55
500
Junction capacitance
CT
VR = 600 V
-
17
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
* Pb containing terminations are not RoHS compliant, exemptions may apply
相关PDF资料 |
PDF描述 |
|---|---|
| 8ETH06STRL | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8ETL06STRRPBF | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8ETX06STRL | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8ETX06STRRPBF | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8ETX06STRR | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 8ETH06SPBF_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Hyperfast Rectifier, 8 A FRED Pt |
| 8ETH06STRL | 功能描述:整流器 600 Volt 8.0 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 8ETH06STRLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 600V 8A 3-Pin(2+Tab) D2PAK T/R |
| 8ETH06STRR | 功能描述:整流器 600 Volt 8.0 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 8ETH06STRRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 600V 8A 3-Pin(2+Tab) D2PAK T/R |
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