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参数资料
| 型号： | 933703410127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/6页 |
| 文件大小： | 49K |
| 代理商： | 933703410127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY329 series
fast, soft-recovery
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 800 V/ 1000 V/ 1200 V
Fast switching
Soft recovery characteristic
I
F(AV) = 8 A
High thermal cycling performance
Low thermal resistance
I
FSM ≤ 75 A
t
rr ≤ 135 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier
diodes
featuring
low
forward voltage drop, fast reverse
1
cathode
recovery
and
soft
recovery
characteristic. The devices are
2
anode
intended for use in TV receivers,
monitors and switched mode power
tab
cathode
supplies.
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BY329
-800
-1000
-1200
V
RSM
Peak non-repetitive reverse
-
800
1000
1200
V
voltage
V
RRM
Peak repetitive reverse voltage
-
800
1000
1200
V
RWM
Crest working reverse voltage
-
600
800
1000
V
I
F(AV)
Average forward current
1
square wave;
δ = 0.5;
-
8
A
T
mb ≤ 122 C
sinusoidal; a = 1.57;
-
7
A
T
mb ≤ 125 C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
16
A
T
mb ≤ 122 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
75
A
current.
t = 8.3 ms
-
82
A
sinusoidal; T
j = 150 C prior
to surge; with reapplied
V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
28
A
2s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
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