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参数资料
| 型号： | 933910440112 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 1.9 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 13/19页 |
| 文件大小： | 137K |
| 代理商： | 933910440112 |
1997 Nov 24
3
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV28 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Ttp =85 °C; see Figs 6 and 7
BYV28-50 to 400
32
A
BYV28-500 and 600
31
A
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYV28-50 to 400
17
A
BYV28-500 and 600
16
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
90
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.12
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 3.5 A; Tj =Tj max;
see Figs 13, 14 and 15
BYV28-50 to 200
0.80
V
BYV28-300 and 400
0.83
V
BYV28-500 and 600
0.98
V
VF
forward voltage
IF = 3.5 A;
see Figs 13, 14 and 15
BYV28-50 to 200
1.02
V
BYV28-300 and 400
1.05
V
BYV28-500 and 600
1.25
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV28-50
55
V
BYV28-100
110
V
BYV28-150
165
V
BYV28-200
220
V
BYV28-300
330
V
BYV28-400
440
V
BYV28-500
560
V
BYV28-600
675
V
IR
reverse current
VR =VRRMmax; see Fig.16
5
A
VR =VRRMmax; Tj = 165 °C;
see Fig.16
150
A
trr
reverse recovery time
when switched from
IF =0.5AtoIR =1A;
measured at IR = 0.25 A;
see Fig.22
BYV28-50 to 200
25
ns
BYV28-300 to 600
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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